| 摘要 |
PURPOSE: A power semiconductor device is provided to prevent a device from being damaged due to unexpected surge by including an additional path in which a current due to the surge flows. CONSTITUTION: A first conductive substrate region(110) is formed in an active region and a termination region. A first conductive semiconductor region(120) is formed in the first conductive substrate region with a preset thickness. A second conductive well region(131,132) is formed in the active region. A second conductive column region(141-148) is formed in the termination region. A first gate control unit(160) is electrically connected to a first gate(153a) and a second conductive column region. |
