COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A compound semiconductor device and a manufacturing method thereof are provided to improve a withstand voltage by forming an amorphous insulation layer between a substrate and a compound semiconductor laminate structure. CONSTITUTION: A compound semiconductor laminate structure(8) is formed on a substrate(1). The compound semiconductor laminate structure includes a buffer layer(3), an electron driving layer(4), a spacer layer(5), an electron supply layer(6), and a cap layer(7). A device isolation region(20) is formed in the compound semiconductor laminate structure to determine a device region. An opening is formed in the cap layer. An insulation layer(12) covering a source electrode and a drain electrode is formed on the cap layer. An amorphous insulation layer(2) is formed between the substrate and the compound semiconductor laminate structure by using an amorphous carbon layer. [Reference numerals] (1) Substrate; (11d) Drain electrode; (11g) Gate electrode; (11s) Source electrode; (12,14) Insulation layer; (13g,10s,10d) Opening part; (2) Amorphous insulation layer; (20) Device isolation region; (3) Buffer layer; (4) Electron driving layer; (5) Spacer layer; (6) Electron supply layer; (7) Cap layer; (8) Compound semiconductor laminate structure;