发明名称 |
Integrated microelectronic device with through-vias |
摘要 |
An integrated microelectronic device is formed from a substrate having a first side and a second side and including a doped active zone (2) in the first side of the substrate. A circuit component is situated in the doped active zone. A through silicon via extends between the second side and the first side, the via being electrically isolated from the substrate by an insulating layer. A buffer zone is situated between the insulating layer and the doped active zone. This buffer zone is positioned under a shallow trench isolation zone provided around the doped active zone. The buffer zone functions to reduce the electrical coupling between the through silicon via and the doped active zone. |
申请公布号 |
US8410574(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US20100961730 |
申请日期 |
2010.12.07 |
申请人 |
FARCY ALEXIS;ROUSSEAU MAXIME;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
FARCY ALEXIS;ROUSSEAU MAXIME |
分类号 |
H01L29/00;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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