发明名称 Reduced current requirements for DRAM self-refresh modes via staggered refresh operations of subsets of memory banks or rows
摘要 Embodiments of the invention describe systems, methods, and apparatuses to reduce the instantaneous power necessary to execute a DRAM device initiated self-refresh. Embodiments of the invention describe a DRAM device enabled to stagger self-refreshes between a plurality of banks. Staggering self-refreshes between banks reduces the current required for a DRAM self-refresh, thus reducing the amount of current required by the DRAM device.
申请公布号 US8411523(B2) 申请公布日期 2013.04.02
申请号 US20100890083 申请日期 2010.09.24
申请人 BAINS KULJIT S.;INTEL CORPORATION 发明人 BAINS KULJIT S.
分类号 G11C7/00 主分类号 G11C7/00
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