| 发明名称 |
Alteration method and alteration apparatus for titanium nitride |
| 摘要 |
An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film. |
| 申请公布号 |
US8409961(B2) |
申请公布日期 |
2013.04.02 |
| 申请号 |
US200913055154 |
申请日期 |
2009.07.08 |
| 申请人 |
SUGAWARA TAKUYA;SATO YOSHIHIRO;TOKYO ELECTRON LIMITED |
发明人 |
SUGAWARA TAKUYA;SATO YOSHIHIRO |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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