| 发明名称 |
MOS transistor with a settable threshold |
| 摘要 |
A MOS transistor comprising a conductive extension of its source region, insulated from its substrate, and partially extending under its channel. |
| 申请公布号 |
US8410539(B2) |
申请公布日期 |
2013.04.02 |
| 申请号 |
US20070279056 |
申请日期 |
2007.02.14 |
| 申请人 |
MAZOYER PASCALE;BOSSU GERMAIN;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
MAZOYER PASCALE;BOSSU GERMAIN |
| 分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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