发明名称 Cleaning method for a process of liquid immersion lithography
摘要 Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production. Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.
申请公布号 US8409360(B2) 申请公布日期 2013.04.02
申请号 US20100662760 申请日期 2010.05.03
申请人 KOSHIYAMA JUN;YOKOYA JIRO;HIRANO TOMOYUKI;TSUJI HIROMITSU;TOKYO OHKA KOGYO CO., LTD. 发明人 KOSHIYAMA JUN;YOKOYA JIRO;HIRANO TOMOYUKI;TSUJI HIROMITSU
分类号 B08B9/00;C11D1/66 主分类号 B08B9/00
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