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发明名称
仅包括NMOS电晶体之逻辑闸
摘要
本发明仅包括NMOS电晶体之逻辑闸,所有驱动器部分与负载部分均为NMOS电晶体,有优越速度性能、无静态功率消耗,且可避免像传统互补金氧半(CMOS)逻辑闸因负载部分使用PMOS电晶体,必须迁就电洞移动率较慢的问题。因本发明之逻辑闸均为NMOS电晶体,所有NMOS电晶体均可利用半导体公司最尖端制作技术节点所允许之最小特征长度来规划制作,故可大幅提高本发明逻辑闸与其应用电路系统之积集密度。此外,本发明逻辑闸若扩及至三五族与及碳和石墨相关半导体技术方面之应用,面积、性能与成本将有更大之获益。
申请公布号
TWI392234
申请公布日期
2013.04.01
申请号
TW098115653
申请日期
2009.05.12
申请人
国立中山大学 高雄市西子湾莲海路70号
发明人
林吉聪
分类号
H03K19/0944;H01L27/088;H01L27/12
主分类号
H03K19/0944
代理机构
代理人
蔡东贤 台北市松山区敦化北路201号7楼
主权项
地址
高雄市西子湾莲海路70号
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