发明名称 FILM FORMING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>PURPOSE: A film forming apparatus and a substrate processing apparatus are provided to prevent various types of process gas from being mixed together by supplying separation gas to each process region including the process gas. CONSTITUTION: A rotation table(2) is installed in a vacuum chamber(1). The rotation table rotates in a substrate mounting region. A process gas supply part supplies different types of process gas to each process region. A separation part has a separation gas nozzle(41). An outlet(62) exhausts the atmosphere in the vacuum chamber. [Reference numerals] (AA,CC) N_2 gas; (BB) Si containing gas; (DD) O_3 gas; (EE) Rotation direction of a rotation table;</p>
申请公布号 KR20130032273(A) 申请公布日期 2013.04.01
申请号 KR20120105190 申请日期 2012.09.21
申请人 TOKYO ELECTRON LIMITED 发明人 HONMA MANABU
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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