POWER DEVICE

摘要

PURPOSE: A power device is provided to improve the electrical reliability for the EOS/ESD of a GaN FET device. CONSTITUTION: A silicon epitaxial layer(301) is formed on a silicon substrate(300). The silicon epitaxial layer comprises a P-type ion implantation layer(303a,303b) and a p-type plug layer(302). An AlGaN/GaN epi layer(307) for a GaN FET device is formed on the p-type plug layer. A gate electrode(310a), a source electrode(310b) and a drain electrode(310c) are formed on the AlGaN/GaN epi layer.