| 摘要 |
PURPOSE: A planar semiconductor device and a manufacturing method thereof are provided to improve the efficiency of a welding process. CONSTITUTION: A wafer having semiconductor devices and lead regions is provided(S101). A first insulating coating step is performed, and then a first insulation layer and a second insulation layer are formed in the upper part and the lower part of the wafer(S103). A conductive welding pad is formed in the lead regions(S105). A semiconductor device is cut down(S107). A second insulating coating step is performed, and then a third insulation layer is formed in the side of the semiconductor device(S109). An electrode is formed at both ends of the semiconductor device, and then the electrode is bonded to the conductive welding pad(S111). A contact layer is formed on an electrode layer(S113). [Reference numerals] (S101) Providing a wafer having several semiconductor devices and a lead region corresponding to the semiconductor devices thereon; (S103) Forming a first insulation layer and a second insulation layer on the upper and lower surfaces, respectively while performing a first insulating coating step; (S105) Forming one conductive welding pad in the lead regions; (S107) Cutting the single semiconductor device while performing a cutting step; (S109) Forming a third insulation layer on the side of the cut semiconductor devices while performing a second insulating coating layer; (S111) Forming an end electrode on both ends of the cut semiconductor and connecting the end electrodes to the conductive welding pad; (S113) Forming a contact layer on an electrode layer
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