发明名称 LOWER LAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING CYCLODEXTRIN COMPOUND
摘要 There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.
申请公布号 KR101248826(B1) 申请公布日期 2013.03.29
申请号 KR20077012355 申请日期 2005.10.25
申请人 发明人
分类号 G03F7/004;G03F7/11;H01L21/027 主分类号 G03F7/004
代理机构 代理人
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