METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT

摘要

A method for producing an optoelectronic component (12) is specified, wherein a transfer layer (2) containing InxGa1-xN where 0 < x < 1 is grown onto a growth substrate (1). Subsequently, ions (3) are implanted into the transfer layer (2) in order to form a separating zone (4), a carrier substrate (5) is applied, and the transfer layer (2) is separated by means of a thermal treatment. A further transfer layer (7), which contains InyGa1-yN where 0 < y <= 1 and y > x, is grown onto the previously grown transfer layer (2), ions are implanted into the further transfer layer (7) in order to form a separating zone (4), a further carrier substrate (8) is applied and the further transfer layer (7) is separated by means of a thermal treatment. Subsequently a semiconductor layer sequence (9) containing an active layer (10) is grown onto that surface of the further transfer layer (7) which faces away from the further carrier substrate (8).