发明名称 |
Semiconductor Device, Display Device, And Electronic Appliance |
摘要 |
In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced. |
申请公布号 |
US2013075723(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213671638 |
申请日期 |
2012.11.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKAKURA MASAYUKI;WATANABE RYOSUKE;SAKATA JUNICHIRO;AKIMOTO KENGO;MIYANAGA AKIHARU;HIROHASHI TAKUYA;KISHIDA HIDEYUKI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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