发明名称 ION IMPLANTATION AND ANNEALING FOR HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SOLAR CELLS
摘要 <p>A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes.</p>
申请公布号 WO2012166749(A3) 申请公布日期 2013.03.28
申请号 WO2012US39901 申请日期 2012.05.29
申请人 SOLEXEL, INC.;MOSLEHI, MEHRDAD, M.;RANA, VIRENDRA, V.;KAPUR, PAWAN 发明人 MOSLEHI, MEHRDAD, M.;RANA, VIRENDRA, V.;KAPUR, PAWAN
分类号 H01L31/042;H01L31/18 主分类号 H01L31/042
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