| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor transistor including an oxide semiconductor layer having high conductivity. <P>SOLUTION: A semiconductor device comprises: an oxide semiconductor layer having an oxide (IGZO) containing indium, gallium, and zinc, and having particles of an indium oxide; a channel formation region in the oxide semiconductor layer; a gate electrode overlapped via a gate insulation film; a source electrode and a drain electrode which are overlapped on a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top gate oxide semiconductor transistor or a bottom gate oxide semiconductor transistor. In addition, the oxide semiconductor layer may be formed on the source electrode and the drain electrode, or may be formed under the source electrode and the drain electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
