| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is capable of maintaining a high ON/OFF ratio even after repeated erasing and writing. <P>SOLUTION: A semiconductor memory device 100 according to the present invention includes a substrate 10, a silicon carbide layer 20 formed on the substrate 10, a metal oxide layer 30 formed on the silicon carbide layer 20, a first electrode 40 electrically connected to the metal oxide layer 30, and a second electrode 50 electrically connected to the substrate 10. <P>COPYRIGHT: (C)2013,JPO&INPIT |
