| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.
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| 申请公布号 |
US2013075757(A1) |
申请公布日期 |
2013.03.28 |
| 申请号 |
US201213555430 |
申请日期 |
2012.07.23 |
| 申请人 |
SUZUKI MARIKO;SAKAI TADASHI;SAKUMA NAOSHI;KATAGIRI MASAYUKI;YAMAZAKI YUICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUZUKI MARIKO;SAKAI TADASHI;SAKUMA NAOSHI;KATAGIRI MASAYUKI;YAMAZAKI YUICHI |
| 分类号 |
H01L29/12;H01L21/20 |
主分类号 |
H01L29/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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