发明名称 SEMICONDUCTOR DEVICE, DEFORMED CROSS SECTION STRUCTURE, AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a CSP (Chip Scale Package) semiconductor device excellent in heat dissipation and manufacturing ease, which inhibits intrusion of a foreign substance such as water, and provide a deformed cross section structure and a manufacturing method of the same for forming a lead frame included in the semiconductor device. <P>SOLUTION: In a present embodiment, a semiconductor device comprises: a lead frame 5A including two thick parts 2A being parts on which protrusions 3 are formed and serving as outer leads, and a thin part 2B between the two thick parts 2A, serving as an inner lead; a semiconductor chip 11 electrically connected to the thin part 2B via a bonding wire 12; and a resin package 14 encapsulating the lead frame 5A and the semiconductor chip 11. The lead frame 5A includes linear fine grooves 4A and 4B formed in parallel with the protrusions 3, and on a top face and an undersurface of the lead frame 5a at parts contacting the resin package 14, respectively. A depth of each of the fine grooves 4A and 4B is smaller than a height of the protrusion. Respective parts of the two thick parts 2A are exposed on a bottom face and a lateral face of the resin package 14. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013058685(A) 申请公布日期 2013.03.28
申请号 JP20110197289 申请日期 2011.09.09
申请人 HITACHI CABLE LTD 发明人 SUZUKI YOSHIO;OBA MAKOTO
分类号 H01L23/50;H01L21/60;H01L23/28;H01L23/29 主分类号 H01L23/50
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