发明名称 |
THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING |
摘要 |
<p>A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.</p> |
申请公布号 |
WO2013042027(A2) |
申请公布日期 |
2013.03.28 |
申请号 |
WO2012IB54903 |
申请日期 |
2012.09.17 |
申请人 |
LAM RESEARCH CORPORATION;LAM RESEARCH AG;GAFF, KEITH, WILLIAM;COMENDANT, KEITH;RICCI, ANTHONY |
发明人 |
GAFF, KEITH, WILLIAM;COMENDANT, KEITH;RICCI, ANTHONY |
分类号 |
H01L21/30;H01C17/02;H05B3/68 |
主分类号 |
H01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|