发明名称 THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
摘要 <p>A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.</p>
申请公布号 WO2013042027(A2) 申请公布日期 2013.03.28
申请号 WO2012IB54903 申请日期 2012.09.17
申请人 LAM RESEARCH CORPORATION;LAM RESEARCH AG;GAFF, KEITH, WILLIAM;COMENDANT, KEITH;RICCI, ANTHONY 发明人 GAFF, KEITH, WILLIAM;COMENDANT, KEITH;RICCI, ANTHONY
分类号 H01L21/30;H01C17/02;H05B3/68 主分类号 H01L21/30
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