| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a semiconductor laser element manufacturing method, which can inhibit increase in operating current and waveguide loss which are caused by formation of a window region and which achieves excellent manufacturing yield. <P>SOLUTION: A manufacturing method of a semiconductor laser element in which a semiconductor lamination part including an active layer having a quantum well structure is provided on a substrate, comprises: forming a stripe-shaped waveguide on an upper part of the semiconductor lamination part to form a resonator facet by cleavage; and forming a window region having wider band gap than the quantum well structure of the active layer in a belt-like region along a cleavage location for forming the resonator facet when viewed from above in a vertical direction with respect to a principal surface of the substrate and forming a groove part for removing a part of the window region at the cleavage location. The window region is formed at a height the same as at least a height of the active layer in a direction vertical to the substrate principal surface. The groove part is formed in parallel with the substrate principal surface in a direction vertical to a longer direction of the waveguide so as to separate from an end of the waveguide. <P>COPYRIGHT: (C)2013,JPO&INPIT |
