A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5
摘要
<p>A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.1 <= x < 1 in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, and (C) an aqueous medium.</p>
申请公布号
WO2013018016(A3)
申请公布日期
2013.03.28
申请号
WO2012IB53878
申请日期
2012.07.30
申请人
BASF SE;NOLLER, BASTIAN MARTEN;DRESCHER, BETTINA;GILLOT, CHRISTOPHE;LI, YUZHUO;BASF (CHINA) COMPANY LIMITED