| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SiC epitaxial wafer in which the surface density of laminate defect is reduced, and to provide a manufacturing method therefor. <P>SOLUTION: The manufacturing method of an SiC epitaxial wafer includes the steps of: determining the ratio becoming laminate defect in an SiC epitaxial film of predetermined thickness formed on an SiC single crystal substrate, out of the basal surface displacement (BPD) existing on the growth surface of the SiC single crystal substrate having an off angle; determining the upper limit of surface density of BPD in the growth surface of the SiC single crystal substrate used; and forming an SiC epitaxial film on the SiC single crystal substrate under the same growth conditions as those of an epitaxial film used in the step of determining the ratio, by using an SiC single crystal substrate below the upper limit. <P>COPYRIGHT: (C)2013,JPO&INPIT |
