发明名称 CYLINDRICAL SPUTTERING TARGET MATERIAL, AND WIRING BOARD AND THIN FILM TRANSISTOR USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To equalize the speed of sputtering a cylindrical sputtering target material from an outer peripheral surface from an inner peripheral surface thereof. <P>SOLUTION: The cylindrical sputtering target material 20 has a cylindrical shape, and is formed from oxygen-free copper having a purity of 3N level or higher. The hardness of the target material gradually increases from the outer peripheral surface 21 to the inner peripheral surface 22, and the orientation rate of a (111) surface gradually increases from the outer peripheral surface 21 to the inner peripheral surface 22. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013057112(A) 申请公布日期 2013.03.28
申请号 JP20110196991 申请日期 2011.09.09
申请人 HITACHI CABLE LTD 发明人 UEDA KOSHIRO;TATSUMI NORIYUKI;KOBAYASHI RYUICHI
分类号 C23C14/34 主分类号 C23C14/34
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