METHODS OF FABRICATING TRANSISTORS INCLUDING SUPPORTED GATE ELECTRODES AND RELATED DEVICES

摘要

PROBLEM TO BE SOLVED: To fabricate transistors by forming a protective layer having an opening extending therethrough on a substrate and then forming a gate electrode in the opening.

SOLUTION: A first portion of the gate electrode laterally extends on surface portions of the protective layer present outside the opening, and a second portion of the gate electrode is disposed apart from the protective layer and laterally extends beyond the first portion. Related devices and fabrication methods are also described.

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