| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of improving operational reliability. <P>SOLUTION: A semiconductor memory device 1 according to an embodiment comprises: blocks BLK; word lines WL; select gate lines SGD; and transfer circuits 11. When data is written and read, the transfer circuits 11 transfer a positive voltage VSGD to a select gate line SGD0 associated with a selected memory string within a selected block BLK0; and transfer a negative voltage VBB to a select gate line SGD1 associated with an unselected memory string within the selected block BLK0 and to the select gate lines SGD associated with memory strings within unselected blocks BLK1 to BLK3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
