| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of performing pretreatment so as to obtain a highly reliable measurement values, when performing measurement of the recombination lifetime for a silicon substrate. <P>SOLUTION: The method of performing pretreatment before measuring the recombination lifetime of a silicon substrate includes a step for carrying the silicon substrate in a heat treatment furnace, a step for forming an oxide film on the silicon substrate by heating the interior of the heat treatment furnace at a temperature of 800-1250°C in an oxidizable atmosphere, a step for carrying out the silicon substrate from the heat treatment furnace when the temperature in the heat treatment furnace is in a range of 700-1000°C, and a step for sintering the silicon substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
