PN DIODE OPTICAL MODULATORS FABRICATED IN RIB WAVEGUIDES
摘要
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
申请公布号
EP1779161(A4)
申请公布日期
2013.03.27
申请号
EP20050750940
申请日期
2005.05.18
申请人
LUXTERA, INC.
发明人
GUNN, LAWRENCE, C., III;KOUMANS, ROGER;LI, BING;LI, GUO, LIANG;PINGUET, THIERRY, J.