发明名称 |
Nitride semiconductor device |
摘要 |
An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1<LC2<LC3  (1). |
申请公布号 |
US8405064(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US201113067042 |
申请日期 |
2011.05.04 |
申请人 |
YAMAGUCHI ATSUSHI;ITO NORIKAZU;TAKADO SHINYA;ROHM CO., LTD. |
发明人 |
YAMAGUCHI ATSUSHI;ITO NORIKAZU;TAKADO SHINYA |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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