发明名称 |
Method of fabricating complementary metal-oxide-semiconductor (CMOS) device |
摘要 |
A method of fabricating a MOS device comprises steps as follows: An interfacial layer, a high-k dielectric layer and a cover layer on a substrate are sequentially formed. Then an in-situ wet etching step is performed by sequentially using a first etching solution to etch the cover layer and using a second etching solution to etch the high-k dielectric layer and the interfacial layer until the substrate is exposed, wherein the second etching solution is a mixed etching solution containing the first etching solution. |
申请公布号 |
US8404591(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US201213482044 |
申请日期 |
2012.05.29 |
申请人 |
YEH CHIU-HSIEN;YANG CHAN-LON;CHIEN CHIN-CHENG;HUNG LIEN-FA;KAO YUN-CHENG;UNITED MICROELECTRONICS CORPORATION;LAM RESEARCH CORPORATION |
发明人 |
YEH CHIU-HSIEN;YANG CHAN-LON;CHIEN CHIN-CHENG;HUNG LIEN-FA;KAO YUN-CHENG |
分类号 |
H01L21/461;H01L21/302 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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地址 |
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