发明名称 |
Transferred thin film transistor and method for manufacturing the same |
摘要 |
Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer. |
申请公布号 |
US8404532(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20100782303 |
申请日期 |
2010.05.18 |
申请人 |
KOO JAE BON;AHN JONG-HYUN;KANG SEUNG YOUL;MUSARRAT HASAN;YOU IN-KYU;CHO KYOUNG IK;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KOO JAE BON;AHN JONG-HYUN;KANG SEUNG YOUL;MUSARRAT HASAN;YOU IN-KYU;CHO KYOUNG IK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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