发明名称 |
Method for forming a semiconductor device and a semiconductor device |
摘要 |
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate having a main horizontal surface, an opposite surface and a completely embedded dielectric region. A deep vertical trench is etched from the main horizontal surface into the semiconductor substrate using the dielectric region as an etch stop. A vertical transistor structure is formed in the semiconductor substrate. A first metallization in ohmic contact with the transistor structure is formed on the main horizontal surface. The semiconductor substrate is thinned at the opposite surface at least close to the dielectric region. Further, a semiconductor device is provided.
|
申请公布号 |
US8404557(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US201113088555 |
申请日期 |
2011.04.18 |
申请人 |
HIRLER FRANZ;MEISER ANDREAS;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;MEISER ANDREAS |
分类号 |
H01L21/332 |
主分类号 |
H01L21/332 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|