method for completing the single crystal growth

摘要

The invention relates to the field of crystal growth. A method for completing the single crystals growth, in particular silicon, in the process of growing by the Czochralski method with the separation of the crystal from the melt and cooling thereof. Before the separating the crucible and the crystal are disposed into the heating zone. The invention provides a separation of the crystal from the melt without the appearance of defects in the single crystal.