| 摘要 |
The invention concerns a method for fabricating at least one detector pixel cell (45) connected to an element (82) formed in a weakly doped silicon substrate (81), characterized in that it comprises: firstly, a first step to fabricate at least one layer (61) by implantation doping and activation annealing, secondly, a second step to fabricate at least one connection node (85) in a circuit (83), from an element (82) formed in the substrate (81) by dry etching and metallization, a step to combine, by bonding, the fabricated doped layer (61) with the fabricated connection node (85); and a step to individualize at least one pixel cell (45) in the doped layer (61) by dry etching; and a passivation and opening step opposite the individualized cell (45), by dry etching. The invention also comprises a sensor including at least one such cell. |
