发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME |
摘要 |
Provided is a nitride semiconductor device comprising a base substrate; a buffer layer formed above the base substrate; an active layer formed on the buffer layer; and at least two electrodes formed above the active layer. The buffer layer includes one or more composite layers that each have a plurality of nitride semiconductor layers with different lattice constants, and at least one of the one or more composite layers is doped with carbon atoms and oxygen atoms in at least a portion of a carrier region of the nitride semiconductor having the largest lattice constant among the plurality of nitride semiconductor layers, the carrier region being a region in which carriers are generated due to the difference in lattice constants between this nitride semiconductor layer and the nitride semiconductor layer formed directly thereon.
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申请公布号 |
US2013069076(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201213617156 |
申请日期 |
2012.09.14 |
申请人 |
IWAMI MASAYUKI;KOKAWA TAKUYA;ADVANCED POWER DEVICE RESEARCH ASSOCIATION |
发明人 |
IWAMI MASAYUKI;KOKAWA TAKUYA |
分类号 |
H01L29/205;H01L21/335 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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