| 摘要 |
This organic transistor (1) comprises at least a lower substrate of plastic material (2), two electrodes (3, 4), respectively a source electrode (3) and a drain electrode (4), deposited on the plastic substrate (2), a semi-conducting layer (5) made of an organic semi-conductor material deposited on the electrodes (3, 4) and the plastic substrate (2), a dielectric layer (6) deposited on the semi-conducting layer (5), and a grid electrode formed on said dielectric layer (6). It further comprises a porous layer (9) between the plastic substrate (2) and the semi-conducting layer (5), wherein said porous layer (9) is situated at least between the source (3) and drain (4) electrodes in order to lower the dielectric constant of the surface of the plastic substrate (2). |
