<p>A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.</p>
申请公布号
WO2013038328(A1)
申请公布日期
2013.03.21
申请号
WO2012IB54696
申请日期
2012.09.10
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;IBM JAPAN LIMITED;HUANG, QIANG;BAKER-O'NEAL, BRETT, CAROLINE