发明名称 STRUCTURE AND METHOD FOR TUNABLE INTERCONNECT SCHEME
摘要 The present disclosure provides one embodiment of a method to form an interconnect structure. The method includes forming a first dielectric material layer on a substrate; patterning the first dielectric material layer to form a plurality of vias therein; forming a metal layer on the first dielectric layer and the substrate, wherein the metal layer fills in the plurality of vias; and etching the metal layer such that portions of the metal layer above the first dielectric material layer are patterned to form a plurality of metal lines, aligned with plurality of vias, respectively.
申请公布号 US2013069234(A1) 申请公布日期 2013.03.21
申请号 US201113236264 申请日期 2011.09.19
申请人 LEE CHUNG-JU;BAO TIEN-I;YEH MING-SHIH;CHEN HAI-CHING;SHUE SHAU-LIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEE CHUNG-JU;BAO TIEN-I;YEH MING-SHIH;CHEN HAI-CHING;SHUE SHAU-LIN
分类号 H01L23/52;H01L21/768 主分类号 H01L23/52
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