发明名称 |
STRUCTURE AND METHOD FOR TUNABLE INTERCONNECT SCHEME |
摘要 |
The present disclosure provides one embodiment of a method to form an interconnect structure. The method includes forming a first dielectric material layer on a substrate; patterning the first dielectric material layer to form a plurality of vias therein; forming a metal layer on the first dielectric layer and the substrate, wherein the metal layer fills in the plurality of vias; and etching the metal layer such that portions of the metal layer above the first dielectric material layer are patterned to form a plurality of metal lines, aligned with plurality of vias, respectively.
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申请公布号 |
US2013069234(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113236264 |
申请日期 |
2011.09.19 |
申请人 |
LEE CHUNG-JU;BAO TIEN-I;YEH MING-SHIH;CHEN HAI-CHING;SHUE SHAU-LIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE CHUNG-JU;BAO TIEN-I;YEH MING-SHIH;CHEN HAI-CHING;SHUE SHAU-LIN |
分类号 |
H01L23/52;H01L21/768 |
主分类号 |
H01L23/52 |
代理机构 |
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