| 摘要 |
[Abstract] A high-purity copper-manganese-alloy sputtering target containing 0.05-20 wt% of Mn and 2 wt ppm or less of C, the balance being constituted by Cu and inevitable impurities, wherein the high-purity copper-manganese-alloy sputtering target is characterized in that when the target is sputtered and a film is formed on a wafer, there are an average of 30 or fewer particles measuring 0.20 mum or greater in diameter of at least one element selected from C, Mn, Si, and Mg; or a compound comprising at least one element selected from C, Mn, Si, and Mg. Thus, adding a suitable amount of elemental Mn to the copper, and limiting the amount of carbon makes it possible to efficiently minimize the generation of particles when sputtering. In particular, there is provided a high-purity copper-manganese-alloy sputtering target that is useful for forming copper-alloy wiring for a semiconductor having a self-diffusion-minimizing function. |
