| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a laminated wafer which efficiently reduces the number and a total area of voids occurring in a wafer peripheral part right after bonding when the laminated wafer is manufactured. <P>SOLUTION: In a manufacturing method of a laminated wafer, after a surface of a bond wafer and a surface of a base wafer is bonded to each other directly or through an insulation film, the bond wafer is formed into a thin film to manufacture the laminated wafer. In the manufacturing method, after the bond wafer is bonded to the base wafer, the wafers are maintained at a temperature ranging 30°C to 60°C for a predetermined time period, and then the bond wafer is formed into the thin film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
