发明名称 |
METHOD FOR FABRICATING A FINFET DEVICE |
摘要 |
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes forming a fin structure on a semiconductor substrate and forming a gate structure on the fin structure. A capping layer is then formed over the semiconductor substrate, fin structure, and gate structure. The capping layer is patterned to form an opening exposing a second portion of the fin structure. An epitaxial layer is grown in the opening and on the second portion of the fin structure. At least one of a source region and a drain region is provided in the epitaxial layer. The method may continue to remove the capping layer.
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申请公布号 |
US2013071980(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201213673406 |
申请日期 |
2012.11.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN HSIEN-HSIN;KWOK TSZ-MEI;SU CHIEN-CHANG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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