发明名称 |
LEAKAGE MEASUREMENT OF THROUGH SILICON VIAS |
摘要 |
A leakage measurement structure for through substrate vias which includes a semiconductor substrate; a plurality of through substrate vias in the semiconductor substrate extending substantially through the semiconductor substrate; and a leakage measurement structure located in the semiconductor substrate. The leakage measurement structure includes a plurality of substrate contacts extending into the semiconductor substrate; a plurality of sensing circuits connected to the plurality of through substrate vias and to the plurality of the substrate contacts, the plurality of sensing circuits providing a plurality of outputs indicative of current leakage from the plurality of through substrate vias; a built-in self test (BIST) engine to step through testing of the plurality of through substrate vias; and a memory coupled to the BIST engine to receive the outputs from the plurality of sensing circuits. Also included is a method of testing a semiconductor substrate having a plurality of through substrate vias for current leakage. |
申请公布号 |
US2013069062(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113233085 |
申请日期 |
2011.09.15 |
申请人 |
BHOOVARAGHAN BHAVANA;FAROOQ MUKTA G.;KINSER EMILY R.;SAROOP SUDESH;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BHOOVARAGHAN BHAVANA;FAROOQ MUKTA G.;KINSER EMILY R.;SAROOP SUDESH |
分类号 |
H01L23/58;H01L21/66 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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