| 摘要 |
1,144,993. Semi-conductor devices. SIEMENS A.G. 13 Sept., 1967 [14 Sept., 1966(2) No. 41757/67. Heading H1K. [Also in Division C7] A minor proportion (0À5%) of Ni or Ti is added to A1 required to be deposited on selected areas of a semi-conductor body by the technique of covering an extended area with the deposited A1 and subsequently etching it away from all but the selected areas using a photographic resist mask. It is stated that the presence of Ni or Ti in the Al both increases the etching rate of the Al during the production process and also improves the electrical performance of the resulting semi-conductor device. Devices to which electrode contacts can be made in this manner include planar diodes and transistors, integrated circuits, and field effect transistors. Fig. 2 (not shown) depicts an apparatus for depositing Ni-doped A1 on to a semi-conductor. This consists of an evacuated chamber with a tantalum holder for the semi-conductor (e.g. a surface oxidized silicon wafer containing a plurality of semi-conductor components only the contact areas of which are exposed through apertures in the oxide), a vaporization source consisting of an electrically heated body of Al-Ni alloy containing 0À5% Ni, and an iris diaphragm between them. After deposition of 0À5Á of metal on the oxide masked semiconductor surface, the wafer is removed from the apparatus and selectively etched using a photo lithographic technique to remove the deposited metal from all but the required electrode areas. This residual metal may subsequently be alloyed to the underlying semi-conductor. |
