COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD FOR PRODUCING THIS ALLOY, AND COPPER ALLOY ROLLED MATERIAL FOR THIS DEVICE

摘要

One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic%, with a remainder being Cu and inevitable impurities, and a conductivity à (%IACS) is within the following range when the content of Mg is given as A atomic%,
Another aspect of this copper alloy for an electronic device is composed of a ternary alloy of Cu, Mg, and Zn which includes Mg at a content of 3.3 to 6.9 atomic% and Zn at a content of 0.1 to 10 atomic%, with a remainder being Cu and inevitable impurities, and a conductivity à (%IACS) is within the following range when the content of Mg is given as A atomic% and the content of Zn is given as B atomic%,