发明名称 |
Semiconductor structure including a high performance fet and a high voltage fet on an SOI substrate |
摘要 |
A first field effect transistor includes a gate dielectric and a gate electrode located over a first portion of a top semiconductor layer in a semiconductor-on-insulator (SOI) substrate. A second field effect transistor includes a portion of a buried insulator layer and a source region and a drain region located underneath the buried insulator layer. In one embodiment, the gate electrode of the second field effect transistor is a remaining portion of the top semiconductor layer. In another embodiment, the gate electrode of the second field effect transistor is formed concurrently with the gate electrode of the first field effect transistor by deposition and patterning of a gate electrode layer. The first field effect transistor may be a high performance device and the second field effect transistor may be a high voltage device. A design structure for the semiconductor structure is also provided. |
申请公布号 |
US8399927(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US201213367646 |
申请日期 |
2012.02.07 |
申请人 |
DING HANYI;FENG KAI D.;HE ZHONG-XIANG;JIN ZHENRONG;LIU XUEFENG;SHI YUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DING HANYI;FENG KAI D.;HE ZHONG-XIANG;JIN ZHENRONG;LIU XUEFENG;SHI YUN |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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