发明名称 |
Method of manufacturing semiconductor light emitting element |
摘要 |
A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element. |
申请公布号 |
US8399272(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US20090998521 |
申请日期 |
2009.10.27 |
申请人 |
YAMAE KAZUYUKI;FUKSHIMA HIROSHI;YASUDA MASAHARU;IWAHASHI TOMOYA;KAMEI HIDENORI;MAEDA SYUUSAKU;PANASONIC CORPORATION |
发明人 |
YAMAE KAZUYUKI;FUKSHIMA HIROSHI;YASUDA MASAHARU;IWAHASHI TOMOYA;KAMEI HIDENORI;MAEDA SYUUSAKU |
分类号 |
H01L21/786 |
主分类号 |
H01L21/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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