摘要 |
A method for depositing a thin film is provided to reduce one cycle and to improve a deposition speed by supplying simultaneously a Ti material, an Al material, and NH3. A method for depositing a thin film includes a process for performing repeatedly one cycle of forming an AlN thin film after forming a TiN thin film by using a Ti material, an Al material, and NH3, or one cycle of forming the TiN thin film after forming the AlN thin film. The method is characterized in that the TiN thin film is formed by supplying simultaneously the Ti material and the NH3. The AlN thin film is formed by supplying simultaneously the Al material and the NH3. A purge process is performed after supplying the Ti material, the Al material, and the NH3. |