| 摘要 |
An LCD and a fabrication method thereof are provided to increase carrier mobility as compared to an amorphous silicon thin film transistor and a poly silicon thin film transistor by using a nano-wire as a semiconductor layer. Gate lines are formed on a substrate(111) at a regular interval in one direction, and a gate electrode(112a) protrudes from the gate line. A redundancy line(122) is formed in a direction perpendicular to the gate line, and does not overlap the gate line. A gate dielectric layer(113) is formed on an entire surface of the substrate including the gate line. A data line(120b) is electrically connected with the redundancy line at one side of the semiconductor layer and is formed in a direction perpendicular to the gate line to define a pixel area. A drain electrode(121a) is formed at the other side of the semiconductor layer at a predetermined interval from the source electrode. A pixel electrode(121b) is connected to the drain electrode and is formed in the pixel area. |
