| 摘要 |
Provided is a Ga2O3 HEMT, which is a high-quality Ga2O3 semiconductor element. Provided is a Ga2O3 HEMT (20), which includes: an i-type beta-Ga2O3 single crystal film (3); an n-type beta-(AlxGa1-x)2O3 single crystal film (4), which is formed on the i-type beta-Ga2O3 single crystal film (3), and is composed of a beta-(AlxGa1-x)2O3 crystal (0<x<=0.6) containing a group IV element; a source electrode (22) and a drain electrode (23), which are formed on the n-type beta-(AlxGa1-x)2O3 single crystal film (4); and a gate electrode (21) formed on the n-type beta-(AlxGa1-x)2O3 single crystal film (4) between the source electrode (22) and the drain electrode (23). |
| 申请人 |
TAMURA CORPORATION;NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY;KYOTO UNIVERSITY;TOKYO INSTITUTE OF TECHNOLOGY;SASAKI, KOHEI;HIGASHIWAKI, MASATAKA;FUJITA, SHIZUO;OHTOMO, AKIRA;OSHIMA, TAKAYOSHI |
发明人 |
SASAKI, KOHEI;HIGASHIWAKI, MASATAKA;FUJITA, SHIZUO;OHTOMO, AKIRA;OSHIMA, TAKAYOSHI |
