C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC DEVICES
摘要
<p>A carbon-rich carbon boron nitride dielectric film (14) having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.</p>
申请公布号
WO2013036322(A1)
申请公布日期
2013.03.14
申请号
WO2012US45517
申请日期
2012.07.05
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;NGUYEN, SON, VAN;GRILL, ALFRED;HAIGH, THOMAS, J.;MEHTA, SANJAY